Bistability and hysteresis in the characteristics of segmented-anode lateral IGBTs

Author

Gärtner, M. ; Vietzke, D. ; Reznik, D. ; Stoisiek, M. ; Oppermann, K.-G. ; Gerlach, W.

Author_Institution

Inst. of Microelectron. & Solid State Phys., Tech. Univ. Berlin, Germany

fYear

1997

fDate

26-29 May 1997

Firstpage

255

Lastpage

259

Abstract

The voltage- and current controlled bistability of Segmented Anode Lateral IGBTs (SA-LIGBT) containing more than one p-anode segment has been investigated experimentally by means of monitoring the infrared recombination radiation, as well as theoretically by two-dimensional device simulation. We have found out that the instabilities are caused by the switching of single p-anode segments from the MOS-mode into the conductivity modulated state and vice-versa. The switching current and voltage show pronounced memory effects, if the single cell structure exhibits S-type Negative Differential Conductivity (SNDC) because of conductivity modulation. The simulation of a simplified vertical hybrid diode/pnp-transistor structure shows very good qualitative agreement with measured characteristics and carrier distributions in the SA-LIGBT. Generally, such hysteresis effects may occur in all electronic devices containing SNDC-elements switched in parallel

Keywords

electrical conductivity transitions; electron-hole recombination; hysteresis; insulated gate bipolar transistors; power transistors; semiconductor device models; MOS-mode; S-type negative differential conductivity; conductivity modulated state; conductivity modulation; current-controlled bistability; hysteresis; infrared recombination radiation; memory effects; segmented-anode lateral IGBTs; single cell structure; single p-anode segments; switching current; two-dimensional device simulation; vertical hybrid diode/pnp-transistor structure; voltage-controlled bistability; Anodes; Conductivity; Dielectric devices; Hysteresis; Infrared surveillance; Insulated gate bipolar transistors; Plasma devices; Plasma measurements; Radiation monitoring; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601487

Filename

601487