High voltage charge-storage diodes and their new applications

Author

Shinohara, S. ; Kobayashi, H. ; Hasegawa, Y. ; Saito, R.

Author_Institution

Origin Electr. Co. Ltd., Tokyo, Japan

fYear

1997

fDate

26-29 May 1997

Firstpage

261

Lastpage

264

Abstract

A new class of charge-storage diodes is presented. They achieve high blocking voltage capability of 1000 V while keeping the unique reverse recovery process that exhibits a large storage time of 5 μsec and a following small decay time of less than 10 nsec. A new structure consisting of a π (P^-) base and a deep P⁺ region accomplishes these characteristics. The diode used in a forward converter making a new energy-recovery circuit with a capacitor brings a high efficiency and a large reduction in part count and cost into the converter. The high voltage charge-storage diodes are expected to produce other new applications and unprecedented circuits

Keywords

charge storage diodes; power convertors; power semiconductor diodes; power semiconductor switches; switched mode power supplies; π (P^-) base; 1000 V; 5 mus; blocking voltage capability; decay time; deep P⁺ region; energy-recovery circuit; forward converter; high voltage charge-storage diodes; reverse recovery process; storage time; Capacitors; Charge carrier lifetime; Circuits; Costs; Diodes; Impurities; P-n junctions; Physics; Power supplies; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on

Conference_Location

Weimar

ISSN

1063-6854

Print_ISBN

0-7803-3993-2

Type

conf

DOI

10.1109/ISPSD.1997.601488

Filename

601488