Title :
High voltage charge-storage diodes and their new applications
Author :
Shinohara, S. ; Kobayashi, H. ; Hasegawa, Y. ; Saito, R.
Author_Institution :
Origin Electr. Co. Ltd., Tokyo, Japan
Abstract :
A new class of charge-storage diodes is presented. They achieve high blocking voltage capability of 1000 V while keeping the unique reverse recovery process that exhibits a large storage time of 5 μsec and a following small decay time of less than 10 nsec. A new structure consisting of a π (P-) base and a deep P+ region accomplishes these characteristics. The diode used in a forward converter making a new energy-recovery circuit with a capacitor brings a high efficiency and a large reduction in part count and cost into the converter. The high voltage charge-storage diodes are expected to produce other new applications and unprecedented circuits
Keywords :
charge storage diodes; power convertors; power semiconductor diodes; power semiconductor switches; switched mode power supplies; π (P-) base; 1000 V; 5 mus; blocking voltage capability; decay time; deep P+ region; energy-recovery circuit; forward converter; high voltage charge-storage diodes; reverse recovery process; storage time; Capacitors; Charge carrier lifetime; Circuits; Costs; Diodes; Impurities; P-n junctions; Physics; Power supplies; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601488
