Title :
Hole bypassing N+ emitter structure of the trench IGBT for the safe switching operation
Author :
Kim, H.S. ; Lee, T.-S. ; Yun, C.M. ; Oh, K.-H. ; Im, P.-G. ; Kim, D.J.
Author_Institution :
Samsung Electrons. Co. Ltd., Kyunggi, South Korea
Abstract :
A new trench IGBT structure which employs the hole bypassing N+ emitter region has been proposed. Numerical simulation and experimental results show that the short circuit immunity of the proposed trench IGBT is improved with increase of the hole bypassing width to total channel width ratio, γ. As γ increases from 0 to 0.8, the short circuit time increases from 6 to 13 μsec without sacrifice of the forward conduction characteristics
Keywords :
insulated gate bipolar transistors; power semiconductor switches; power transistors; forward conduction characteristics; hole bypassing N+ emitter structure; safe switching operation; short circuit immunity; trench IGBT; Conductivity; Current density; Electronic ballasts; Fabrication; Footwear; Insulated gate bipolar transistors; Numerical simulation; Protection; Switching circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601490
