DocumentCode
32446
Title
Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors
Author
Hsuan-An Chen ; Tung-Chuan Shih ; Shih-Yen Lin
Author_Institution
Res. Center for Appl. Sci., Taipei, Taiwan
Volume
27
Issue
3
fYear
2015
fDate
Feb.1, 1 2015
Firstpage
261
Lastpage
263
Abstract
In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 μm, but also enhances the optical response from GaAs.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; phototransistors; semiconductor quantum dots; GaAs; InAs; InAs quantum dot absorption layer; in-plane gate transistors; n-GaAs channel; optical response; photocurrents; quantum dot phototransistors; Absorption; Current measurement; Gallium arsenide; HEMTs; Logic gates; Wavelength measurement; In-plane Gate Transistors; In-plane gate transistors; InAs Quantum Dots; InAs quantum dots;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2014.2367515
Filename
6949647
Link To Document