Title :
Long-Wavelength In-Plane Gate InAs Quantum-Dot Phototransistors
Author :
Hsuan-An Chen ; Tung-Chuan Shih ; Shih-Yen Lin
Author_Institution :
Res. Center for Appl. Sci., Taipei, Taiwan
Abstract :
In-plane gate transistors with and without an InAs quantum-dot (QD) absorption layer are investigated. The n-GaAs channel acts as both an absorption layer for incident light with energy higher than the GaAs bandgap and the transport path for the photocurrents. The insertion of InAs QD layer not only extends the absorption wavelength to 1.26 μm, but also enhances the optical response from GaAs.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; phototransistors; semiconductor quantum dots; GaAs; InAs; InAs quantum dot absorption layer; in-plane gate transistors; n-GaAs channel; optical response; photocurrents; quantum dot phototransistors; Absorption; Current measurement; Gallium arsenide; HEMTs; Logic gates; Wavelength measurement; In-plane Gate Transistors; In-plane gate transistors; InAs Quantum Dots; InAs quantum dots;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2367515
