DocumentCode
3244704
Title
A He-irradiated IGBT with a shallow p-base and shallow FLRs
Author
Kushida, T. ; Mase, A. ; Kawahashi, A. ; Ono, K.
Author_Institution
Toyota Motor Corp., Aichi, Japan
fYear
1997
fDate
26-29 May 1997
Firstpage
277
Lastpage
280
Abstract
A trade-off between a low forward voltage and fast switching time is a very important characteristic for an insulated gate bipolar transistor (IGBT) that is used in applications such as inverters for motor control. A trench-IGBT has a very good trade-off but has a high cost because of the complicated structure. This study presents our new development of a 600 V planar-IGBT that has a trade-off characteristic comparable to that of a trench-IGBT. This has been realized by employing a device structure with a shallow p-base and shallow FLRs, and by using local lifetime control through He irradiation
Keywords
carrier lifetime; insulated gate bipolar transistors; ion beam effects; 600 V; He; He irradiation; forward voltage; insulated gate bipolar transistor; inverter; local lifetime control; motor control; planar-IGBT; shallow FLR; shallow p-base; switching time; Breakdown voltage; Costs; Electrons; Epitaxial layers; Helium; Insulated gate bipolar transistors; Inverters; Low voltage; Motor drives; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location
Weimar
ISSN
1063-6854
Print_ISBN
0-7803-3993-2
Type
conf
DOI
10.1109/ISPSD.1997.601492
Filename
601492
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