A distributed-circuit model for the power MOSFET under ionizing radiation

Author

Keshavarz, Abdol A. ; Hawkins, Charlee F. ; Neamen, Donald A.

Author_Institution

Dept. of Electr. & Comput. Eng., New Mexico Univ., Albuquerque, NM, USA

fYear

1989

fDate

26-29 Jun 1989

Firstpage

830

Abstract

A distributed-circuit model is presented that analyzes the transient response and radiation rate threshold of a MOSFET under ionizing radiation. A system of ordinary differential equations with variable coefficients that govern the lateral base voltage distribution and the transient response of the parasitic bipolar transistor is developed and numerically solved. The BAMBI device simulator is used to calculate the I-V characteristics of the individual bipolar transistors used in the model under high injection situations

Keywords

electronic engineering computing; insulated gate field effect transistors; power transistors; radiation effects; semiconductor device models; BAMBI device simulator; I-V characteristics; differential equations; ionizing radiation; lateral base voltage distribution; parasitic bipolar transistor transient response; power MOSFETs; radiation rate threshold; transient response; Bipolar transistors; Differential equations; Electric breakdown; FETs; Ionizing radiation; MOSFET circuits; Power MOSFET; Power system modeling; Transient response; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE

Conference_Location

Milwaukee, WI

Type

conf

DOI

10.1109/PESC.1989.48566

Filename

48566