Title :
New dual gate-BRT structures with encased FBSOA
Author :
Amazaki, T.Y. ; Baliga, B.J.
Author_Institution :
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Abstract :
In order to improve the forward biased safe operating area (FBSOA) of the Dual Gate-BRT (DG-BRT) in IGBT mode, the characteristics of the three different kind of structures: (a) with low P-channel resistance (R M) under the off-gate; (b) low P-base resistance (RB ) under the N+ emitter region; and (c) low P-base spreading resistance (RS) at the side of the N+ emitter region, were investigated by two-dimensional numerical simulation. It was found that reducing RM by using the accumulation mode P-MOSFET results in a relatively small improvement in FBSOA but leads to a large snapback in the on-state J-V curve. On the other hand, reducing RB and RS using a highly doped P-base region or by including a subsurface P+ implant in the P-base region results in a large increase in FBSOA. An excellent current saturation is observed in the structure with higher P-base doping concentration and P+ subsurface implantation with no thyristor latch-up even for +15 V applied to the on-gate
Keywords :
insulated gate bipolar transistors; power semiconductor devices; semiconductor device models; thyristors; 15 V; 2D numerical simulation; IGBT mode; P-base region; accumulation mode P-MOSFET; base resistance controlled thyristor; current saturation; dual gate-BRT structures; encased FBSOA; forward biased SOA; highly doped P-base region; safe operating area; subsurface P+ implant; thyristor mode; Anodes; Cathodes; Doping; Electric resistance; Implants; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Numerical simulation; Thyristors;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601497
