DocumentCode
3246122
Title
The dv/dt, di/dt, and temperature dependence in modeling the thyristor circuits
Author
Losic, Novica A.
Author_Institution
Wisconsin-Parkside Univ., Kenosha, WI, USA
fYear
1989
fDate
26-29 Jun 1989
Firstpage
198
Abstract
The effects of dv/dt, di/dt, and temperature in thyristors are modeled. The device ratings with respect to these characteristics are made programmable in addition to two other programmable parameters: reverse recovery time and on-resistance. The I-G SPICE IV/G6 software is used to perform modeling, analysis, and simulation of thyristor circuits with devices characterized by these five parameters
Keywords
circuit analysis computing; thyristors; I-G SPICE IV/G6 software; device ratings; di/dt; dv/dt; on-resistance; reverse recovery time; temperature dependence; thyristor circuits; Circuit simulation; Circuit testing; Equations; Monitoring; Performance analysis; SPICE; Software performance; Temperature dependence; Thyristor circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1989. PESC '89 Record., 20th Annual IEEE
Conference_Location
Milwaukee, WI
Type
conf
DOI
10.1109/PESC.1989.48594
Filename
48594
Link To Document