DocumentCode
3246134
Title
Critical sensitivity of flash gate dimension spread on electrical performances for advanced embedded memory
Author
Agharben, El Amine ; Roussy, A. ; Bocquet, M. ; Bileci, M. ; Begouin, S. ; Marchadier, A.
Author_Institution
EMSE-CMP, Gardanne, France
fYear
2015
fDate
3-6 May 2015
Firstpage
401
Lastpage
404
Abstract
In this paper a correlation between specific inline and electrical parameters has been deeply investigated. This study shows the impact of the flash gate intra-die and intra-wafer spread on the memory performances. A process recipe optimization has been evaluated to recover the effects of these variations. This optimization allows us to reduce the written threshold voltage intra-wafer spread by fifty percent.
Keywords
embedded systems; flash memories; optimisation; random-access storage; advanced embedded memory; critical sensitivity; flash gate dimension spread; flash gate intra-die; process recipe optimization; written threshold voltage intra-wafer spread; Correlation; Flash memories; Fluctuations; Layout; Logic gates; Resists; Threshold voltage; Embedded Memory; Intra-Die spread; Intra-wafer Variability; Non Volatile Memory; Semiconductor;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference (ASMC), 2015 26th Annual SEMI
Conference_Location
Saratoga Springs, NY
Type
conf
DOI
10.1109/ASMC.2015.7164428
Filename
7164428
Link To Document