DocumentCode
3246396
Title
Class-E power amplifier design at 2.5 GHz using a packaged transistor
Author
Collins, Gayle Fran ; Wood, Jo
Author_Institution
MaXentric Technol., La Jolla, CA, USA
fYear
2013
fDate
20-23 Jan. 2013
Firstpage
82
Lastpage
84
Abstract
A Class-E power amplifier has been designed to operate at 2.5 GHz using a commercial, packaged GaAs pHEMT. The design approach used a novel analysis of the package impedances. The objective was to present optimal harmonic loads to the transistor, using lumped-component matching on commercial PCB material. Using an MRFG35010 plastic packaged transistor, a drain efficiency of 72% with about 3 W output power was achieved at 2.55 GHz.
Keywords
HEMT integrated circuits; III-V semiconductors; UHF power amplifiers; gallium arsenide; integrated circuit design; Class-E power amplifier; GaAs; MRFG35010 plastic packaged transistor; PCB; frequency 2.5 GHz; lumped-component matching; optimal harmonic; pHEMT; Capacitance; Harmonic analysis; Power amplifiers; Power system harmonics; Resonant frequency; Switches; Transistors; Class-E; Power amplifier; high efficiency; switching amplifier;
fLanguage
English
Publisher
ieee
Conference_Titel
Biomedical Wireless Technologies, Networks, and Sensing Systems (BioWireleSS), 2013 IEEE Topical Conference on
Conference_Location
Austin, TX
Print_ISBN
978-1-4673-2930-9
Type
conf
DOI
10.1109/BioWireleSS.2013.6613682
Filename
6613682
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