Title :
Inversion layer emitter devices for HV ICs
Author :
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
Novel device structures termed Lateral Inversion Layer Emitter Transistors (LILETs) for HVICs are proposed and demonstrated numerically and experimentally. These structures are based on the use of the inversion layer as a minority carrier injector. Thus, the transistor or thyristor emitter is formed by a surface inversion layer as opposed to the classical concept of a permanent diffused emitter
Keywords :
inversion layers; minority carriers; power MOSFET; power integrated circuits; power semiconductor devices; HV ICs; LILET; inversion layer emitter devices; lateral power transistors; minority carrier injector; surface inversion layer; Bipolar transistors; Electrons; FETs; Impedance; MOSFET circuits; Physics; Semiconductor diodes; Substrates; Threshold voltage; Thyristors;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601501
