Title :
Application of IGBT, MCT and EST in hard- and soft-switching power converters
Author :
Trivedi, M. ; Li, M.H. ; Pendharkar, S. ; Shenai, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
The performance of power insulated gate bipolar transistor (IGBT), MOS-controlled thyristor (MCT) and emitter switched thyristor (EST) in hard- and soft-switching conditions are studied in detail using extensive measurements and device and circuit simulations. Simulated results are in excellent agreement with the measured data under a variety of stress conditions. Simulation results were obtained from a novel mixed device and circuit simulator in which plasma switching dynamics are studied under boundary conditions imposed by the circuit operation. Based on these results, a critical study is made on the performance of MCT and EST in hard- and soft-switching converter applications. The results of simulation are compared with IGBT operated under identical conditions
Keywords :
MOS-controlled thyristors; circuit analysis computing; insulated gate bipolar transistors; power convertors; power semiconductor switches; power transistors; switching circuits; IGBT; MOS-controlled thyristor; boundary conditions; circuit operation; circuit simulation; circuit simulator; emitter switched thyristor; hard-switching conditions; mixed device; plasma switching dynamics; power insulated gate bipolar transistor; soft-switching power converters; stress conditions; Circuit simulation; Insulated gate bipolar transistors; MOSFETs; Plasma applications; Plasma measurements; Plasma simulation; Power measurement; Stress measurement; Switching circuits; Thyristors;
Conference_Titel :
Power Electronics, Drives and Energy Systems for Industrial Growth, 1996., Proceedings of the 1996 International Conference on
Conference_Location :
New Delhi
Print_ISBN :
0-7803-2795-0
DOI :
10.1109/PEDES.1996.539541
