Title :
A novel thin film transistor for high voltage circuitry on glass
Author :
Clough, F.J. ; Chen, Y. ; Narayanan, E. M Sankara ; Eccleston, W. ; Milne, W.I.
Author_Institution :
Emerging Technols. Res. Centre, DeMontfort Univ., Leicester, UK
Abstract :
This paper describes the operation and performance of a novel polysilicon high voltage thin film transistor (HVTFT) structure incorporating a Semi-Insulating (SI) field plate (SI HVTFT). Experimental data confirms that the semi-insulating layer reduces the on state current-pinching effect resulting in improved current drivability. In the off state the semi-insulating layer helps to reshape the potential distribution within the device offset region resulting in a high blocking capability. The 2-D numerical simulator MEDICI is used to gain an insight into the impact of the SI layer on device operation
Keywords :
MOS integrated circuits; elemental semiconductors; glass; power MOSFET; power integrated circuits; silicon; thin film transistors; 2D numerical simulator; MEDICI; Si; current drivability; device offset region; glass substrate; high blocking capability; high voltage circuitry; onstate current-pinching effect; polysilicon HV TFT; potential distribution; semiinsulating field plate; thin film transistor; Active matrix technology; Circuits; Ferroelectric materials; Flat panel displays; Glass; Liquid crystal displays; Optical polymers; Optical signal processing; Thin film transistors; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601505
