DocumentCode
3247360
Title
MESFET linearity improvement by channel doping control
Author
Pedro, Jose C.
Author_Institution
Dept. de Electron. e Telecoms, Aveiro Univ., Portugal
fYear
1995
fDate
16-20 May 1995
Firstpage
1527
Abstract
The present work is intended to evaluate the linearity that can be provided by general purpose MESFETs. By a simple physics-based analysis, and a practical amplifier design, it will be proved that educated device and bias point selection, can approximate IMD performance of normal channel doping profiles, to the one that would be expected from a MESFET device with a specially tailored doping profile.<>
Keywords
Schottky gate field effect transistors; doping profiles; intermodulation distortion; microwave amplifiers; microwave circuits; microwave field effect transistors; semiconductor doping; IMD performance; MESFET linearity; amplifier design; bias point selection; channel doping control; doping profiles; physics-based analysis; Communication system control; Doping profiles; FETs; Intermodulation distortion; Intrusion detection; Linearity; MESFETs; Nonlinear distortion; Performance analysis; Telecommunication control;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406265
Filename
406265
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