Capacitance Density Comparison of PECVD Silicon Oxynitride and Silicon Nitride Dielectric for MIM Capacitor

Author

Zoolfakar, Ahmad Sabirin ; Rashid, Norazah Abdul ; Saman, Rahimah Mohd ; Ahmad, Mohd Rais

Author_Institution

Technol. Dev., Microelectron. & Semicond., MIMOS Berhad, Kuala Lumpur

fYear

2006

fDate

38869

Firstpage

327

Lastpage

330

Abstract

In this work, we compare capacitance density of MIM capacitors between PECVD Silicon Nitride (SiN) and PECVD Silicon Oxynitride (SiON). Process parameters for both dielectrics are different in term of gasses, refractive index, and dielectric constant, while thicknesses are similar. The capacitors are tested on two different test structures, which are stand alone and matching cells. The size of the cell is 90times90mum². Our measurements show that SiN capacitors are superior to SiON capacitors in terms of higher capacitance density and lower matching variation

Keywords

MIM devices; capacitance; dielectric thin films; permittivity; plasma CVD; refractive index; silicon compounds; thin film capacitors; MIM capacitor; PECVD silicon nitride dielectric film; PECVD silicon oxynitride dielectric film; SiN; SiON; capacitance density; dielectric constant; refractive index; Capacitance; Dielectric substrates; Dielectrics and electrical insulation; Etching; MIM capacitors; Plasma applications; Plasma density; Plasma properties; Plasma temperature; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and applications of Dielectric Materials, 2006. 8th International Conference on

Conference_Location

Bali

Print_ISBN

1-4244-0189-5

Electronic_ISBN

1-4244-0190-9

Type

conf

DOI

10.1109/ICPADM.2006.284182

Filename

4062671