Title :
Capacitance Density Comparison of PECVD Silicon Oxynitride and Silicon Nitride Dielectric for MIM Capacitor
Author :
Zoolfakar, Ahmad Sabirin ; Rashid, Norazah Abdul ; Saman, Rahimah Mohd ; Ahmad, Mohd Rais
Author_Institution :
Technol. Dev., Microelectron. & Semicond., MIMOS Berhad, Kuala Lumpur
Abstract :
In this work, we compare capacitance density of MIM capacitors between PECVD Silicon Nitride (SiN) and PECVD Silicon Oxynitride (SiON). Process parameters for both dielectrics are different in term of gasses, refractive index, and dielectric constant, while thicknesses are similar. The capacitors are tested on two different test structures, which are stand alone and matching cells. The size of the cell is 90times90mum2. Our measurements show that SiN capacitors are superior to SiON capacitors in terms of higher capacitance density and lower matching variation
Keywords :
MIM devices; capacitance; dielectric thin films; permittivity; plasma CVD; refractive index; silicon compounds; thin film capacitors; MIM capacitor; PECVD silicon nitride dielectric film; PECVD silicon oxynitride dielectric film; SiN; SiON; capacitance density; dielectric constant; refractive index; Capacitance; Dielectric substrates; Dielectrics and electrical insulation; Etching; MIM capacitors; Plasma applications; Plasma density; Plasma properties; Plasma temperature; Silicon compounds;
Conference_Titel :
Properties and applications of Dielectric Materials, 2006. 8th International Conference on
Conference_Location :
Bali
Print_ISBN :
1-4244-0189-5
Electronic_ISBN :
1-4244-0190-9
DOI :
10.1109/ICPADM.2006.284182
