Title :
A highly-tunable 12 GHz quadrature LC-VCO in SiGe BiCMOS process
Author :
Coban, A.L. ; Ahmed, K. ; Chang, C.
Author_Institution :
Div. of Network Access, Conexant Syst. Inc., Newport Beach, CA, USA
Abstract :
This paper describes a 12 GHz fully-integrated, fully-differential quadrature LC VCO. Fabricated in a 0.35 /spl mu/m SiGe BiCMOS process with 55 GHz f/sub T/, the oscillator achieves 37% tuning range (9.62 to 14.0 GHz) and exhibits 113.5 and -112.3 dBc/Hz phase noise at 10 MHz away from 11 and 13 GHz oscillation frequencies, respectively. The oscillator draws 39 mA current from a 3.3 V supply and occupies 0.36 mm/sup 2/ active die area.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MMIC oscillators; circuit tuning; integrated circuit noise; phase noise; semiconductor materials; voltage-controlled oscillators; 0.35 micron; 3.3 V; 39 mA; 55 GHz; 9.62 to 14.0 GHz; BiCMOS process; SiGe; active die area; fully-differential oscillator; oscillation frequencies; phase noise; quadrature LC-VCO; tuning range; BiCMOS integrated circuits; Circuit optimization; Coupling circuits; Germanium silicon alloys; Inductors; Phase noise; Silicon germanium; Tail; Tuning; Voltage-controlled oscillators;
Conference_Titel :
VLSI Circuits, 2001. Digest of Technical Papers. 2001 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-89114-014-3
DOI :
10.1109/VLSIC.2001.934212
