A new large-signal model based on pulse measurement techniques for RF power MOSFET

Author

Collantes, J.M. ; Raoux, J.J. ; Villotte, J.P. ; Quere, R. ; Montoriol, G. ; Dupis, F.

Author_Institution

IRCOM, Limoges Univ., France

fYear

1995

fDate

16-20 May 1995

Firstpage

1553

Abstract

A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band.<>

Keywords

S-parameters; UHF field effect transistors; equivalent circuits; power MOSFET; power field effect transistors; semiconductor device models; I-V drain current source; L-band; RF power MOSFET; UHF power FET; characterization technique; extraction technique; harmonic-balance simulator; large-signal model; pulse measurement techniques; pulsed I-V characteristics; pulsed S-parameters measurements; table-based model; thermal state; MOSFET circuits; Power MOSFET; Power measurement; Pulse measurements; RF signals; Radio frequency; Scattering parameters; Space vector pulse width modulation; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406271

Filename

406271