Title :
A new large-signal model based on pulse measurement techniques for RF power MOSFET
Author :
Collantes, J.M. ; Raoux, J.J. ; Villotte, J.P. ; Quere, R. ; Montoriol, G. ; Dupis, F.
Author_Institution :
IRCOM, Limoges Univ., France
Abstract :
A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band.<>
Keywords :
S-parameters; UHF field effect transistors; equivalent circuits; power MOSFET; power field effect transistors; semiconductor device models; I-V drain current source; L-band; RF power MOSFET; UHF power FET; characterization technique; extraction technique; harmonic-balance simulator; large-signal model; pulse measurement techniques; pulsed I-V characteristics; pulsed S-parameters measurements; table-based model; thermal state; MOSFET circuits; Power MOSFET; Power measurement; Pulse measurements; RF signals; Radio frequency; Scattering parameters; Space vector pulse width modulation; Testing; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406271
