Title :
Silicon single-electron transistors on a SIMOX substrate
Author :
Murase, Katsumi ; Talahashi, Y. ; Fujiwara, Akira ; Nagase, Masao ; Tabe, Michiharu
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
fDate :
29 Aug-1 Sep 1995
Abstract :
Until recently, single-electron transistors have only been operable at very low temperatures, mostly below 1 K. By contrast, Si single-electron transistors fabricated on a SIMOX substrate by using a pattern-dependent oxidation technique show conductance oscillations even at room temperature. In addition, a single-electron memory effect is observed in specially designed Si single-electron transistors
Keywords :
SIMOX; cryogenic electronics; oxidation; quantum interference devices; semiconductor quantum wires; semiconductor storage; single electron transistors; 61 to 300 K; SIMOX substrate; Si-SiO2; conductance oscillations; pattern-dependent oxidation technique; quantum wires; room temperature; single-electron memory effect; single-electron transistors; Capacitors; Electrodes; Large scale integration; Oxidation; Silicon; Single electron memory; Single electron transistors; Temperature; Tunneling; Wire;
Conference_Titel :
Design Automation Conference, 1995. Proceedings of the ASP-DAC '95/CHDL '95/VLSI '95., IFIP International Conference on Hardware Description Languages. IFIP International Conference on Very Large Scal
Conference_Location :
Chiba
Print_ISBN :
4-930813-67-0
DOI :
10.1109/ASPDAC.1995.486389
