Title :
Fundamental approach to the storage of energy in dielectrics
Author_Institution :
Lab. de Phys. des Solides, Univ. de Paris-Sud, Orsay, France
Abstract :
The classic approach to the storage of energy in dielectrics and their degradation does not consider the fact that charge injection and charge trapping always occur in capacitors subjected to high electric fields. In fact, when a charge is trapped in an insulating material and localized at an atomic scale, a quasi static polarization is induced, producing a local increase of the internal energy of the order of 5 to 10 eV. This change of the internal energy affects all the thermal properties of the material. Under certain circumstances this energy reaches a level so high that it constitutes a reservoir of energy sufficient to produce irreversible damage of the material when it is released after charges are detrapped
Keywords :
MOS capacitors; electric breakdown; electron traps; energy storage; hole traps; space charge; MOS capacitors; charge injection; charge trapping; degradation; detrapping; dielectrics; energy storage; high electric fields; insulating material; internal energy; irreversible damage; quasi static polarization; thermal properties; Degradation; Dielectric materials; Dielectrics and electrical insulation; Electromagnetic fields; Electron traps; Energy storage; Lattices; MOS capacitors; Polarization; Reservoirs;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1995. ICSD'95., Proceedings of the 1995 IEEE 5th International Conference on
Conference_Location :
Leicester
Print_ISBN :
0-7803-2040-9
DOI :
10.1109/ICSD.1995.523002