Title :
Selection of Optimum Device Size and Trans-Conductance Ratio for High Speed Digital CMOS Inverter Design for a Given Fanout Load
Author :
Asati, Abhijit ; Sahoo, Subhendu Kumar ; Shekhar, Chandra
Author_Institution :
Birla Inst. of Technol. & Sci., Pilani, India
Abstract :
The PMOS/NMOS width ratio (Ã) and W/L ratio of NMOS device is an important ratio in the design of digital logic cells using conventional CMOS logic design style. In this paper we propose a simulation-based method applied to CMOS inverter to accurately estimate an optimum W/L ratio of NMOS device and PMOS/NMOS width ratio when fanout loading of 1, 4 and 8 cells of similar type are present. The appropriate selection of W/L ratio of NMOS device and PMOS/NMOS width ratio makes the digital design faster and reduces the power consumption.
Keywords :
CMOS logic circuits; integrated circuit design; invertors; logic design; CMOS logic design style; NMOS device; PMOS/NMOS width ratio; digital logic cells; fanout loading; high speed digital CMOS inverter design; optimum device size; power consumption; transconductance ratio; CMOS logic circuits; CMOS technology; Circuit noise; Energy consumption; Inverters; Logic design; Logic devices; Logic gates; MOS devices; Voltage;
Conference_Titel :
Emerging Trends in Engineering and Technology (ICETET), 2009 2nd International Conference on
Conference_Location :
Nagpur
Print_ISBN :
978-1-4244-5250-7
Electronic_ISBN :
978-0-7695-3884-6
DOI :
10.1109/ICETET.2009.199