DocumentCode :
3249041
Title :
A 5 to 130 V level shifter composed of thin gate oxide dual terminal drain PMOSFETS
Author :
Mori, Kazuhisa ; Tanaka, Koji ; Kobayashi, Kenya ; Takahashi, Kenichiro ; Takahashi, Mitsuasa
Author_Institution :
Semicond. Div., NEC Corp., Kanagawa, Japan
fYear :
1997
fDate :
26-29 May 1997
Firstpage :
345
Lastpage :
348
Abstract :
The market demand for high performance and cost effective flat panel display (FPD: e.g. plasma display, electroluminescent display) system has mandated that FPD driver designs need to be more cost effective. The driver plays a vital role in determining the FPD (system) performance and manufacturing cost as well as the panel itself. The driver is basically a device which can translate digital data signals (typically 5 V-logic) to the series of high voltage outputs (60 to 300 V) for the panel electrode load array. To reduce the manufacturing cost, this paper describes a study of the novel 5 to 130 V level shifter with Dual Terminal Drain PMOSFETs (DTDPMOS) for the first time. To adopt this level shifter, although the driver IC consists of both high and low voltage CMOS, the high voltage CMOS can be realized with the same thin gate oxide as the low voltage CMOS
Keywords :
CMOS analogue integrated circuits; driver circuits; flat panel displays; integrated circuit design; power integrated circuits; 5 to 130 V; driver designs; dual terminal drain PMOSFETS; flat panel display; high voltage CMOS; high voltage outputs; level shifter; low voltage CMOS; manufacturing cost; panel electrode load array; Breakdown voltage; Costs; Driver circuits; Electrodes; Flat panel displays; Low voltage; MOSFET circuits; Manufacturing; National electric code; Plasma displays;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
ISSN :
1063-6854
Print_ISBN :
0-7803-3993-2
Type :
conf
DOI :
10.1109/ISPSD.1997.601513
Filename :
601513
Link To Document :
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