Title :
An operational transconductance amplifier in 0.18/spl mu/m SOI
Author :
Rourke, Daniel M O ; Abdel-Aty-Zohdy, Hoda S.
Author_Institution :
Dept. of Electr. & Syst. Eng., Oakland Univ., Rochester, MI
Abstract :
An operational transconductance amplifier (OTA) using three cascaded comparator stages is presented in 180nm fully depleted silicon on insulator (FDSOI) technology processed at MIT Lincoln Laboratory. Each comparator stage used 14 transistors with close to minimum aspect ratios. The OTA is self-biasing without the need for external bias circuitry, and provides a rail to rail input common mode range. The use of deep submicron and FDSOI technology provides for an open loop gain of 64.5dB, unity gain bandwidth product of 2.27 GHz using an actual area of only 860 mum2
Keywords :
comparators (circuits); operational amplifiers; silicon-on-insulator; 0.18 micron; 180 nm; 2.27 GHz; 64.5 dB; FDSOI; SOI; cascaded comparator stage; external bias circuitry; fully depleted silicon on insulator; operational transconductance amplifier; self biasing OTA; Bandwidth; CMOS process; Circuit simulation; Differential amplifiers; Layout; Microelectronics; Operational amplifiers; Silicon on insulator technology; Transconductance; Voltage;
Conference_Titel :
Circuits and Systems, 2005. 48th Midwest Symposium on
Conference_Location :
Covington, KY
Print_ISBN :
0-7803-9197-7
DOI :
10.1109/MWSCAS.2005.1594025
