• DocumentCode
    3249278
  • Title

    An operational transconductance amplifier in 0.18/spl mu/m SOI

  • Author

    Rourke, Daniel M O ; Abdel-Aty-Zohdy, Hoda S.

  • Author_Institution
    Dept. of Electr. & Syst. Eng., Oakland Univ., Rochester, MI
  • fYear
    2005
  • fDate
    7-10 Aug. 2005
  • Firstpage
    5
  • Abstract
    An operational transconductance amplifier (OTA) using three cascaded comparator stages is presented in 180nm fully depleted silicon on insulator (FDSOI) technology processed at MIT Lincoln Laboratory. Each comparator stage used 14 transistors with close to minimum aspect ratios. The OTA is self-biasing without the need for external bias circuitry, and provides a rail to rail input common mode range. The use of deep submicron and FDSOI technology provides for an open loop gain of 64.5dB, unity gain bandwidth product of 2.27 GHz using an actual area of only 860 mum2
  • Keywords
    comparators (circuits); operational amplifiers; silicon-on-insulator; 0.18 micron; 180 nm; 2.27 GHz; 64.5 dB; FDSOI; SOI; cascaded comparator stage; external bias circuitry; fully depleted silicon on insulator; operational transconductance amplifier; self biasing OTA; Bandwidth; CMOS process; Circuit simulation; Differential amplifiers; Layout; Microelectronics; Operational amplifiers; Silicon on insulator technology; Transconductance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2005. 48th Midwest Symposium on
  • Conference_Location
    Covington, KY
  • Print_ISBN
    0-7803-9197-7
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2005.1594025
  • Filename
    1594025