A fully analog two-way sequential GaN power amplifier with 40% fractional bandwidth

Author

Jin Shao ; Rui Ma ; Koon Hoo Teo ; Shinjo, Shintaro ; Yamanaka, Koji

Author_Institution

Mitsubishi Electr. Res. Labs. (MERL), Cambridge, MA, USA

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

3

Abstract

In this paper, we report a two-way sequential power amplifier (SPA) using GaN HEMTs. The proposed fully analog SPA delivers P_sat of approximately 40dBm over 2-3 GHz covering 40% fractional bandwidth. The design consists of a 3dB input coupler, a main amplifier, a peak amplifier, and a 10dB output coupler for power combining. After proper designing and optimizing these critical wideband couplers in terms of both phase and amplitude alignment, the measured final SPA shows 45% to 61% drain efficiency (DE) at 35dBm (5dB backoff) output from 2.1 to 2.9 GHz under CW stimulus. A complete set of SPA with analog RF input and output network is demonstrated.

Keywords

UHF couplers; UHF power amplifiers; gallium compounds; high electron mobility transistors; power combiners; wideband amplifiers; CW stimulus; DE; GaN HEMT; amplitude alignment; drain efficiency; fractional bandwidth; frequency 2.1 GHz to 2.9 GHz; fully analog two-way sequential power amplifier; phase alignment; power combining; wideband coupler; Couplers; Couplings; Impedance matching; Loss measurement; Peak to average power ratio; Power amplifiers; Voltage measurement; 4G; Efficiency; GaN; Sequential power amplifier; broadband;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164561

Filename

7164561