Title :
A compact double-gate MOSFET model comprising quantum-mechanical and non-static effects
Author :
Baccarani, G. ; Reggiani, S.
Author_Institution :
Dipt. di Elettronica, Inf. e Sistemistica, Bologna Univ., Italy
Abstract :
A compact model for the double-gate MOSFET (DG-MOSFET) which fully accounts for quantum mechanical effects, including motion quantization normal to the Si-SiO2 interface, band splitting into subbands and non-static effects in the transport model, is worked out. The model holds both in subthreshold and strong inversion, and ensures a smooth transition between the two regions. A simplified energy-balance transport model is worked out which allows us to compare the drain-current calculations with Monte Carlo data
Keywords :
Fermi level; MOSFET; Monte Carlo methods; electronic density of states; inversion layers; semiconductor device models; 2D DOS; Fermi levels; Monte Carlo data; Si-SiO2; band splitting into subbands; compact model; double-gate MOSFET model; drain-current calculations; electron charge distribution; energy-balance transport model; inversion layer charge model; motion quantization; nonstatic effects; quantum-mechanical effects; smooth transition; strong inversion; subthreshold; Capacitance; Effective mass; Equations; MOSFET circuits; Monte Carlo methods; Quantization; Quantum mechanics; Silicon; Space charge; Transconductance;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799247
