• DocumentCode
    3249453
  • Title

    Circuit model for power LDMOS including quasi-saturation

  • Author

    Jang, Jaejune ; Amborg, Torkel ; Yu, Zhiping ; Dutton, Robert W.

  • Author_Institution
    Center for Integrated Syst., Stanford Univ., CA, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    15
  • Lastpage
    18
  • Abstract
    This paper presents an analytical modeling of power LDMOS. The unique features of the LDMOS such as graded channel and quasi-saturation effect which results in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using an advanced device simulation
  • Keywords
    Poisson equation; SPICE; equivalent circuits; power MOSFET; semiconductor device models; PISCES; Poisson equation; SPICE; advanced device simulation; capacitance; circuit model; graded channel; lateral electric field; nonlinear LDD resistance; power LDMOS; quasi-saturation; Analytical models; Capacitance; Circuit simulation; Electrons; Integrated circuit modeling; MOSFET circuits; Power MOSFET; Power system modeling; SPICE; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    4-930813-98-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.1999.799248
  • Filename
    799248
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3249453