Title :
Circuit model for power LDMOS including quasi-saturation
Author :
Jang, Jaejune ; Amborg, Torkel ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Center for Integrated Syst., Stanford Univ., CA, USA
Abstract :
This paper presents an analytical modeling of power LDMOS. The unique features of the LDMOS such as graded channel and quasi-saturation effect which results in a peculiar behavior on capacitance and nonlinear LDD resistance are analyzed and modeled using an advanced device simulation
Keywords :
Poisson equation; SPICE; equivalent circuits; power MOSFET; semiconductor device models; PISCES; Poisson equation; SPICE; advanced device simulation; capacitance; circuit model; graded channel; lateral electric field; nonlinear LDD resistance; power LDMOS; quasi-saturation; Analytical models; Capacitance; Circuit simulation; Electrons; Integrated circuit modeling; MOSFET circuits; Power MOSFET; Power system modeling; SPICE; Voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799248
