Impact-ionization in silicon at large operating temperature

Author

Valdinoci, M. ; Ventura, D. ; Vecchi, M.C. ; Rudan, M. ; Baccarani, G. ; Illien, F. ; Stricker, A. ; Zullino, L.

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

1999

fDate

1999

Firstpage

27

Lastpage

30

Abstract

In this work, electron impact-ionization in silicon is investigated both theoretically and experimentally in the temperature range between 25 and 400°C. A new compact model for the impact-ionization coefficient is proposed, which nicely fits the theoretical data from the Boltzmann solver HARM and the available experimental data in the above temperature range. The new model has been validated by simulating the reverse characteristics of junction diodes, and turns out to correctly predict the temperature dependence of breakdown voltage

Keywords

elemental semiconductors; impact ionisation; semiconductor device breakdown; semiconductor device models; semiconductor diodes; silicon; 25 to 400 C; DESSIS device simulator; HARM Boltzmann solver; Si; bipolar devices; breakdown voltage; compact model; impact-ionization coefficient; junction diodes; large operating temperature; reverse characteristics; temperature dependence; Acoustic scattering; Charge carrier processes; Data mining; Electrons; Ionization; Optical scattering; Predictive models; Silicon; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799251

Filename

799251