Atomic scale simulation of extended defects: Monte Carlo approach

This paper reports Monte Carlo calculations of the bimolecular reaction of extended defects, which explicitly takes into account the time evolution of the size density of extended defects in an effort to cover a broad range of behavior. Our Monte Carlo calculation is in quantitative agreement with experimental deactivation data and successfully reproduces the rapid deactivation at the initial phase followed by slow deactivation thereafter, During the annealing step, the density of the dislocation loops decreases while their size increases. Furthermore, the dislocation loops suppress the injection of silicon interstitials, thereby retarding the enhancement of the marker layers at the start of annealing