Control and improvement of surface triangulation for three-dimensional process simulation

Author

Bär, E. ; Lorenz, J.

Author_Institution

Device Technol. Div., Fraunhofer Inst. of Integrated Circuits, Erlangen, Germany

fYear

1999

fDate

1999

Firstpage

75

Lastpage

78

Abstract

Appropriate meshes are crucial for accurate and efficient 3D process simulation. In this paper, we present a set of tools operating on surface and interface triangulations. These tools allow the improvement of the accuracy of interfaces, the reduction of the number of triangles, and the removal of obtuse not coplanarily compensated triangles. The first tool is used within integrated topography simulation environments based on different data structures, e.g. cell-based and segment-based. The latter two are particularly important for providing appropriate input to mesh generation for 3D process simulation

Keywords

mesh generation; semiconductor process modelling; spatial data structures; 3D process simulation; cell-based data structures; integrated topography simulation environments; interface triangulation; mesh generation; obtuse triangle removal; segment-based data structures; surface triangulation tools; triangle number reduction; Circuit simulation; Data structures; Error correction; Geometry; Mesh generation; Rough surfaces; Smoothing methods; Solid modeling; Surface topography; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799263

Filename

799263