DocumentCode :
3249736
Title :
A new algorithm for interconnect capacitance extraction based on a fictitious domain method
Author :
Putot, S. ; Charlet, F. ; Witomski, P.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Grenoble, France
fYear :
1999
fDate :
1999
Firstpage :
79
Lastpage :
82
Abstract :
We propose a new approach for fast and accurate extraction of capacitance in multiconductor cells embedded in multiple dielectric media. We use the so-called fictitious domain method with Lagrange multipliers for the problem formulation. It leads to a coupled linear system in which unknowns are the potential on a regular 3D grid of a simple-shaped domain, imbedding the dielectric media, and the charge on a mesh of the conductor surfaces. Thanks to the regular grid, the storage of information related to the volumic mesh is not necessary and we can use fast solvers. Numerical results on 3D complex structures show that the method is more efficient, both in time and memory, than a finite elements or a boundary elements method
Keywords :
capacitance; conjugate gradient methods; integrated circuit interconnections; semiconductor process modelling; surface charging; 3D complex structures; Lagrange multipliers; conductor surface mesh charge; conjugate gradient algorithm; coupled linear system; fast solvers; fictitious domain method; interconnect capacitance extraction algorithm; multiconductor cells; multiple dielectric media; numerical results; regular 3D grid; simple-shaped domain; Boundary conditions; Capacitance; Conductors; Dielectrics; Finite element methods; Geometry; Integral equations; Lagrangian functions; Linear systems; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
Type :
conf
DOI :
10.1109/SISPAD.1999.799264
Filename :
799264
Link To Document :
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