Title :
Optimization and Analysis on Several Impact Factors of High-Gain Separate Absorption, Grading, Charge and Multiplication Avalanche Photodiodes
Author :
Hu, Dapeng ; Xu, Bin ; Zhou, Xilin ; Guo, Fangmin
Author_Institution :
Key Lab. of Polar Mater. & Devices, East China Normal Univ., Shanghai, China
Abstract :
The band structure, current response, bias voltage distribution and the bias-gain relationship of InGaAsP-InP avalanche photodiode (APD) which comprise separate layer of absorption, grading, charge and multiplication (SAGCM) have been simulated in detail by software of APSYS. The current response discussed in the paper shows a significant improvement compared with the previous APD which used the SACM structure. Meanwhile an optimized SAGCM-APD structure is proposed to further reduce the punch-through voltage while electric field distribution keeps invariant, and its multiplication gain value dramatically increased, which is almost 5 times larger than that of former one.
Keywords :
III-V semiconductors; avalanche breakdown; avalanche photodiodes; electric fields; indium compounds; InGaAsP-InP; avalanche photodiodes; band structure; bias voltage distribution; bias-gain relationship; current response; electric field distribution; high gain separate absorption; photodiode absorption; photodiode charge; photodiode grading; photodiode multiplication; punch-through voltage; Absorption; Analytical models; Avalanche photodiodes; Doping; Impact ionization; Indium phosphide; Low voltage; Photonic band gap; Semiconductor process modeling; Tunneling;
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
DOI :
10.1109/SOPO.2009.5230066
