Parallelization of a Monte-Carlo ion implantation simulator for three-dimensional crystalline structures

Author

Hössinger, A. ; Radi, M. ; Scholz, B. ; Fahringer, T. ; Langer, E. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Austria

fYear

1999

fDate

1999

Firstpage

103

Lastpage

106

Abstract

The simulation of ion implantation using a Monte-Carlo method is one of the most time consuming tasks in process simulation, which makes it a first-order target for parallelization. We present a parallelization strategy for the Monte-Carlo ion implantation simulator MCIMPL based on the message passing interface (MPI), with an almost linear performance gain

Keywords

Monte Carlo methods; electronic engineering computing; ion implantation; message passing; parallel processing; semiconductor doping; semiconductor process modelling; MCIMPL simulation; Monte-Carlo ion implantation simulator; Monte-Carlo method; ion implantation; linear performance gain; message passing interface; parallelization; parallelization strategy; process simulation; simulation; three-dimensional crystalline structures; Crystallization; Ion implantation; Master-slave; Message passing; Microelectronics; Performance gain; Production; Rapid thermal processing; Semiconductor devices; Workstations;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799271

Filename

799271