Title :
Transport-reaction model for interface state build-up at the Si-SiO 2 interface [in MOSFETs]
Author :
Iizuka, Takahiro ; Yoshida, Takaki
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
The MOS interface state build-up process was simulated for a 1D MOS structure within a framework of reaction-transport model. The identified kinetics are summarized as simple power laws. The transport-limited mode of half power of the stress time has emerged universally regardless of the charge state of transported species
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor-insulator boundaries; silicon; silicon compounds; 1D MOS structure; MOS interface state build-up process; MOSFETs; Si-SiO2; power laws; stress time; transport-limited mode; transport-reaction model; Current measurement; Differential equations; Interface states; Kinetic theory; MOSFETs; National electric code; Partial differential equations; Power system modeling; Stress; Ultra large scale integration;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799276
