DocumentCode :
3249988
Title :
Low Operating Voltage and High Efficiency Vertical GaN Based LEDs
Author :
Liu, W.H. ; Shan, L. ; Chang, Y. ; Doan, T. ; Tran, C. ; Chu, C. ; Cheng, C. ; Chu, J. ; Fan, F. ; Cheng, H.
Author_Institution :
SemiPhotonics Corp., Taiwan
fYear :
2009
fDate :
14-16 Aug. 2009
Firstpage :
1
Lastpage :
3
Abstract :
Vertical GaN based Light Emitting Diodes (VLED) on metal alloy base were realized and characterized for solid state lighting application. An operating voltage of less than 2.9 Voltage from a high efficiency and high power blue LED was achieved. And, an efficiency of more than 120 lumens/watt from a white LED was achieved also. The dissipate heat more effectively than conventional and flip-chip LEDs, thanks to the higher thermal conductivity of a copper alloy base. This increases their maximum operating current and output power and makes them more suitable for solid-state lighting applications. In addition, these VLED exhibit many advantages over those on sapphire under extreme operation conditions for general lighting application.
Keywords :
III-V semiconductors; LED lamps; gallium compounds; low-power electronics; wide band gap semiconductors; GaN; VLED; heat dissipation; operating current; output power; solid-state lighting; vertical GaN based light emitting diode; Copper alloys; Costs; Electrodes; Gallium nitride; LED lamps; Light emitting diodes; Low voltage; Mirrors; Solid state lighting; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
Type :
conf
DOI :
10.1109/SOPO.2009.5230070
Filename :
5230070
Link To Document :
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