Title :
A three dimensional mesh generation method with precedent triangulation of boundary
Author :
Tanaka, Katsuhiko ; Notsu, A. ; Furukawa, Akio
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A three dimensional mesh generation method in which triangulation of domain boundary is performed first is desirable since requirements for mesh around the boundary can be handled more easily. Based on this method, a mesh generator for 3D device simulator is developed, which can form layered mesh along planar boundary. Practicality of this simulator is demonstrated through analysis of electrical characteristics of MOS devices
Keywords :
MIS devices; mesh generation; semiconductor device models; MOS device; domain boundary triangulation; electrical characteristics; numerical simulation; three-dimensional mesh generation; Analytical models; Electric variables; MOS devices; Mesh generation; National electric code; Partial differential equations; Research and development; Silicon; Transmission line matrix methods;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799280
