Title :
Ultra thin-wafer technology for a new 600 V-NPT-IGBT
Author :
Laska, T. ; Matschitsch, M. ; Scholz, W.
Author_Institution :
Siemens AG, Munich, Germany
Abstract :
In this paper the method of manufacturing 100 μm thin IGBT wafers is described. The key topic of new deposition processes reducing the bow of very thin wafers is discussed as well as improvements in equipment and wafer handling. These measurements are the basis to realize for the first time 600 V Non-Punch-Through IGBTs with their advantages of cost effective silicon material and a very good trade off relationship between on state voltage and turn off losses. At a similar on state voltage of about 2 V the turn off energy can be halved compared to a state of the art epi IGBT
Keywords :
insulated gate bipolar transistors; losses; power transistors; semiconductor technology; 100 micron; 2 V; 600 V; deposition processes; non-punch-through IGBTs; on state voltage; turn off energy; turn off losses; ultra thin-wafer technology; wafer handling; Energy measurement; Insulated gate bipolar transistors; Metallization; Pulp manufacturing; Silicon; Soldering; Stress; Temperature; Tin; Voltage;
Conference_Titel :
Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Conference_Location :
Weimar
Print_ISBN :
0-7803-3993-2
DOI :
10.1109/ISPSD.1997.601518
