DocumentCode
3250076
Title
RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation
Author
Roy, S. ; Kaya, S. ; Asenov, A. ; Barker, J.R.
Author_Institution
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fYear
1999
fDate
1999
Firstpage
147
Lastpage
150
Abstract
A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed
Keywords
Ge-Si alloys; MOSFET; Monte Carlo methods; elemental semiconductors; finite element analysis; semiconductor device models; semiconductor materials; silicon; RF MOSFET; Si; SiGe; carrier transport; figure of merit; finite element model; transfer characteristics; transient ensemble Monte Carlo simulation; Equivalent circuits; FETs; Geometry; Germanium silicon alloys; MOSFETs; Monte Carlo methods; Performance analysis; Radio frequency; Silicon germanium; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location
Kyoto
Print_ISBN
4-930813-98-0
Type
conf
DOI
10.1109/SISPAD.1999.799282
Filename
799282
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