• DocumentCode
    3250080
  • Title

    Bias considerations in transistor circuit design

  • Author

    Ghandhi, S.

  • Author_Institution
    General Electric Co., Syracuse, NY, USA
  • Volume
    0
  • fYear
    1957
  • fDate
    14-15 Feb. 1957
  • Firstpage
    10
  • Lastpage
    10
  • Abstract
    Summary form only given. It is known that the operating point of a transistor has a tendency to shift with temperature. An analysis is made of the factors contributing to this shift. It is found necessary to define two stability factors for an adequate formulation of the bias problem. The se factors, together with the voltage and current defining the operating point, are used in the design of bias networks. Various stabilization circuits are considered in detail, and design procedures set up for these schemes. A comparison is made of the various schemes; in particular, direct and feedback stabilization are compared on the basis of battery drain, AC gain, and variation of operating point with battery voltage. The stabilization of direct coupled stages is also discussed, and the design of a two-stage direct-coupled pair is taken up in detail. Non-linear techniques for temperature stabilization are also discussed. These are useful in special applications such as high power output stages, where the temperature changes are extreme, or in low level circuits where extremely stable operation is required, e.g., oscillators and DC amplifiers.
  • Keywords
    Batteries; Circuit stability; Circuit synthesis; Coupling circuits; Feedback; High power amplifiers; Operational amplifiers; Oscillators; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1957 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1957.1183970
  • Filename
    1183970