DocumentCode :
3250105
Title :
Consistent comparison of drift-diffusion and hydro-dynamic device simulations
Author :
Grasser, T. ; Kosina, H. ; Selberherr, S.
Author_Institution :
Inst. fur Microelectron., Tech. Univ. Wien, Austria
fYear :
1999
fDate :
1999
Firstpage :
151
Lastpage :
154
Abstract :
Due to the ongoing downscaling of devices non-local effects become more and more important. These non-local effects can be considered in a device simulator using a hydrodynamic (HD) transport model. However, solving the equation system resulting from a HD transport model is known to be much more expensive in computational terms compared to the simpler drift-diffusion (DD) transport model. Thus the HD model should only be used when really necessary in order not to waste valuable computational resources. However, the validity of the DD model must be carefully investigated which is subject to this paper
Keywords :
semiconductor device models; drift-diffusion transport model; hydrodynamic transport model; nonlocal effects; semiconductor device simulation; Algebra; Computational modeling; Differential equations; High definition video; Hydrodynamics; Lattices; MOSFETs; Microelectronics; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
Type :
conf
DOI :
10.1109/SISPAD.1999.799283
Filename :
799283
Link To Document :
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