A study of hermetic transitions for microwave packages

Author

Jong-Gwan Yook ; Dib, Nihad I. ; Yasan, Eray ; Katehi, L.P.B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1995

fDate

16-20 May 1995

Firstpage

1579

Abstract

Two numerical techniques, the finite difference in time domain (FDTD) and the finite element method (FEM) in frequency domain, are employed to characterize microstrip hermetic transition geometries in an effort to investigate high frequency effects. Measurements performed on these transitions compare favorably with theory. It is shown that these hermetic wall transitions may suffer from parasitic parallel plate modes which however can be eliminated with the use of vias at appropriate locations. Two different transitions have been analyzed from 5 GHz to 25 GHz and have been found to be limited in performance by higher return loss as frequency increases. This indicates the need for very careful characterization of transitions intended for use in microwave and millimeter-wave applications.<>

Keywords

finite difference time-domain analysis; finite element analysis; frequency-domain analysis; integrated circuit packaging; microstrip lines; microwave integrated circuits; 5 to 25 GHz; finite difference time domain method; finite element method; frequency domain; hermetic wall transition; high frequency effects; microstrip; microwave packages; numerical techniques; parasitic parallel plate mode; return loss; Finite difference methods; Finite element methods; Frequency domain analysis; Geometry; Microstrip; Packaging; Performance analysis; Performance evaluation; Performance loss; Time domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406277

Filename

406277