DocumentCode :
3250142
Title :
A study of hermetic transitions for microwave packages
Author :
Jong-Gwan Yook ; Dib, Nihad I. ; Yasan, Eray ; Katehi, L.P.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear :
1995
fDate :
16-20 May 1995
Firstpage :
1579
Abstract :
Two numerical techniques, the finite difference in time domain (FDTD) and the finite element method (FEM) in frequency domain, are employed to characterize microstrip hermetic transition geometries in an effort to investigate high frequency effects. Measurements performed on these transitions compare favorably with theory. It is shown that these hermetic wall transitions may suffer from parasitic parallel plate modes which however can be eliminated with the use of vias at appropriate locations. Two different transitions have been analyzed from 5 GHz to 25 GHz and have been found to be limited in performance by higher return loss as frequency increases. This indicates the need for very careful characterization of transitions intended for use in microwave and millimeter-wave applications.<>
Keywords :
finite difference time-domain analysis; finite element analysis; frequency-domain analysis; integrated circuit packaging; microstrip lines; microwave integrated circuits; 5 to 25 GHz; finite difference time domain method; finite element method; frequency domain; hermetic wall transition; high frequency effects; microstrip; microwave packages; numerical techniques; parasitic parallel plate mode; return loss; Finite difference methods; Finite element methods; Frequency domain analysis; Geometry; Microstrip; Packaging; Performance analysis; Performance evaluation; Performance loss; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-2581-8
Type :
conf
DOI :
10.1109/MWSYM.1995.406277
Filename :
406277
Link To Document :
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