Advances in spherical harmonic device modeling: calibration and nanoscale electron dynamics

Author

Lin, Chung-Kai ; Goldsman, Neil ; Mayergoyz, Isaak ; Aronowitz, Sheldon ; Belova, Nadya

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1999

fDate

1999

Firstpage

167

Lastpage

170

Abstract

Improvements in the Spherical Harmonic (SH) method for solving Boltzmann Transport Equation (BTE) are presented. The simulation results provide the same physical detail as analytical band Monte Carlo (MC) calculations, and are obtained approximately a thousand times faster. A new physical model for surface scattering has also been developed. As a result, the SHBTE model achieves calibration for a complete process of I-V characteristics and substrate current consistently for the first time

Keywords

Boltzmann equation; calibration; semiconductor device models; surface scattering; Boltzmann transport equation; I-V characteristics; SHBTE simulation; calibration; nanoscale electron dynamics; spherical harmonic device model; substrate current; surface scattering; Boltzmann equation; Calibration; Distribution functions; Educational institutions; Electrons; Finite wordlength effects; High definition video; Large scale integration; Nanoscale devices; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799287

Filename

799287