A high efficiency, 40dBm, 728-768 MHz MMIC Doherty power amplifier using low-voltage GaAs HBT technology for LTE and active antenna system applications

Author

Aktug, Ahmet ; Degirmenci, Ahmet ; Sayginer, Sebnem

Author_Institution

Aselsan Inc., Ankara, Turkey

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

3

Abstract

In this paper we report on the design and measurements of 1.75× 2.45mm² monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) fabricated using low-voltage, low-cost GaAs hetero-junction bipolar transistor (HBT) technology. In measurements, from 31dBm to 40dBm saturated output power higher than 43% drain efficiency is obtained across 728 to 768 MHz band. Moreover, single stage Doherty amplifier exhibits 14dB small signal gain over the band of operation. To the best of our knowledge, with low voltage GaAs HBT, the highest efficiency and saturated output power are reported in this work.

Keywords

III-V semiconductors; Long Term Evolution; MMIC amplifiers; UHF amplifiers; active antennas; heterojunction bipolar transistors; LTE application; Long Term Evolution; MMIC DPA; MMIC Doherty power amplifier; active antenna system application; frequency 728 MHz to 768 MHz; low-voltage gallium arsenide HBT technology; low-voltage gallium arsenide heterojunction bipolar transistor technology; monolithic microwave integrated circuit Doherty power amplifier; signal gain; Antennas; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Transmission line measurements; Active antenna system (AAS); Doherty power amplifier; GaAs; hetero-junction bipolar transistor (HBT); high-efficiency; long term evolution (LTE); lowvoltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164596

Filename

7164596