Title :
A high efficiency, 40dBm, 728-768 MHz MMIC Doherty power amplifier using low-voltage GaAs HBT technology for LTE and active antenna system applications
Author :
Aktug, Ahmet ; Degirmenci, Ahmet ; Sayginer, Sebnem
Author_Institution :
Aselsan Inc., Ankara, Turkey
fDate :
March 30 2015-April 1 2015
Abstract :
In this paper we report on the design and measurements of 1.75× 2.45mm2 monolithic microwave integrated circuit (MMIC) Doherty power amplifier (DPA) fabricated using low-voltage, low-cost GaAs hetero-junction bipolar transistor (HBT) technology. In measurements, from 31dBm to 40dBm saturated output power higher than 43% drain efficiency is obtained across 728 to 768 MHz band. Moreover, single stage Doherty amplifier exhibits 14dB small signal gain over the band of operation. To the best of our knowledge, with low voltage GaAs HBT, the highest efficiency and saturated output power are reported in this work.
Keywords :
III-V semiconductors; Long Term Evolution; MMIC amplifiers; UHF amplifiers; active antennas; heterojunction bipolar transistors; LTE application; Long Term Evolution; MMIC DPA; MMIC Doherty power amplifier; active antenna system application; frequency 728 MHz to 768 MHz; low-voltage gallium arsenide HBT technology; low-voltage gallium arsenide heterojunction bipolar transistor technology; monolithic microwave integrated circuit Doherty power amplifier; signal gain; Antennas; Gallium arsenide; Heterojunction bipolar transistors; MMICs; Power amplifiers; Power generation; Transmission line measurements; Active antenna system (AAS); Doherty power amplifier; GaAs; hetero-junction bipolar transistor (HBT); high-efficiency; long term evolution (LTE); lowvoltage;
Conference_Titel :
Wireless Symposium (IWS), 2015 IEEE International
Conference_Location :
Shenzhen
DOI :
10.1109/IEEE-IWS.2015.7164596
