Title :
Effect of the tunneling rates on the conductance characteristics of single-electron transistors
Author :
Scholze, A. ; Schenk, A. ; Fichtner, W.
Author_Institution :
Integrated Syst. Labs., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We present calculations of the linear-response conductance of a SiGe based single electron transistor (SET). The tunneling rates through the source- and lead barriers are calculated using Bardeen´s transfer Hamiltonian formalism (1961). The tunneling matrix elements are calculated for transitions between the 0D states in the quantum dot and the lowest subband in the 1D constriction. We compare the results for the conductance peaks with those from calculations with a constant rate, i.e., where the shape of the peaks is only due to energetic arguments
Keywords :
Ge-Si alloys; semiconductor materials; single electron transistors; tunnelling; 1D subband; SiGe; linear response conductance; matrix element; quantum dot; single electron transistor; transfer Hamiltonian; tunneling rate; Germanium silicon alloys; Laboratories; Nanoscale devices; Quantum dots; Reservoirs; Shape; Silicon germanium; Single electron transistors; Statistics; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799288
