A physically-based analytical model for a-Si devices including drift and diffusion currents

Author

Colalongo, Luigi ; Valdinoci, Marina ; Rudan, Massimo

Author_Institution

Dipt. di Elettronica, Bologna Univ., Italy

fYear

1999

fDate

1999

Firstpage

179

Lastpage

182

Abstract

A new compact model for a-Si TFTs is proposed. The model is physically based as the relation between the surface and the quasi-Fermi potentials is correctly accounted for, and therefore implicitly accounts for both linear and saturation operating conditions. Among other consequences, the explicit definition of the threshold and saturation voltages as input parameters is not needed

Keywords

Fermi level; amorphous semiconductors; carrier lifetime; electron traps; elemental semiconductors; semiconductor device models; silicon; surface potential; thin film transistors; Si; a-Si TFT; compact model; diffusion currents; drift currents; gap states; linear operating conditions; n-channel devices; physically-based analytical model; quasi-Fermi level; quasi-Fermi potentials; saturation operating conditions; surface potentials; trapped charge effects; Amorphous silicon; Analytical models; Availability; Charge carrier processes; Circuit synthesis; Electron traps; Electronic mail; MOSFETs; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799290

Filename

799290