Title :
A physically-based analytical model for a-Si devices including drift and diffusion currents
Author :
Colalongo, Luigi ; Valdinoci, Marina ; Rudan, Massimo
Author_Institution :
Dipt. di Elettronica, Bologna Univ., Italy
Abstract :
A new compact model for a-Si TFTs is proposed. The model is physically based as the relation between the surface and the quasi-Fermi potentials is correctly accounted for, and therefore implicitly accounts for both linear and saturation operating conditions. Among other consequences, the explicit definition of the threshold and saturation voltages as input parameters is not needed
Keywords :
Fermi level; amorphous semiconductors; carrier lifetime; electron traps; elemental semiconductors; semiconductor device models; silicon; surface potential; thin film transistors; Si; a-Si TFT; compact model; diffusion currents; drift currents; gap states; linear operating conditions; n-channel devices; physically-based analytical model; quasi-Fermi level; quasi-Fermi potentials; saturation operating conditions; surface potentials; trapped charge effects; Amorphous silicon; Analytical models; Availability; Charge carrier processes; Circuit synthesis; Electron traps; Electronic mail; MOSFETs; Thin film transistors; Threshold voltage;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799290
