DocumentCode
3250391
Title
Persistent Photoconductivity in Undoped n-Type ZnO Thin Films
Author
Zhang, Li ; Fu, Guangsheng ; Teng, Xiaoyun ; Yu, Wei ; Xu, Heju
Author_Institution
Coll. of Phys. Sci. & Technol., Hebei Univ., Baoding, China
fYear
2009
fDate
14-16 Aug. 2009
Firstpage
1
Lastpage
3
Abstract
Persistent photoconductivity was observed in ZnO film. The photoresponse transients were fitted well with exponential curves. The decay time constant represented the time accumulation during the process of the oxygen photodesorption.
Keywords
II-VI semiconductors; desorption; photoconductivity; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; exponential curves; oxygen photodesorption; persistent photoconductivity; photoresponse transients; undoped n-type thin films; Argon; Educational institutions; Grain size; Photoconductivity; Sputtering; Substrates; Temperature; Transistors; X-ray scattering; Zinc oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location
Wuhan
Print_ISBN
978-1-4244-4412-0
Type
conf
DOI
10.1109/SOPO.2009.5230089
Filename
5230089
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