DocumentCode :
3250391
Title :
Persistent Photoconductivity in Undoped n-Type ZnO Thin Films
Author :
Zhang, Li ; Fu, Guangsheng ; Teng, Xiaoyun ; Yu, Wei ; Xu, Heju
Author_Institution :
Coll. of Phys. Sci. & Technol., Hebei Univ., Baoding, China
fYear :
2009
fDate :
14-16 Aug. 2009
Firstpage :
1
Lastpage :
3
Abstract :
Persistent photoconductivity was observed in ZnO film. The photoresponse transients were fitted well with exponential curves. The decay time constant represented the time accumulation during the process of the oxygen photodesorption.
Keywords :
II-VI semiconductors; desorption; photoconductivity; semiconductor thin films; wide band gap semiconductors; zinc compounds; ZnO; exponential curves; oxygen photodesorption; persistent photoconductivity; photoresponse transients; undoped n-type thin films; Argon; Educational institutions; Grain size; Photoconductivity; Sputtering; Substrates; Temperature; Transistors; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
Conference_Location :
Wuhan
Print_ISBN :
978-1-4244-4412-0
Type :
conf
DOI :
10.1109/SOPO.2009.5230089
Filename :
5230089
Link To Document :
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