Title :
Full-band Monte Carlo device simulation of a Si/SiGe-HBT with a realistic Ge profile
Author :
Keith, S. ; Jungemann, C. ; Decker, S. ; Neinhüs, B. ; Bartels, M. ; Meinerzhagen, B.
Author_Institution :
Inst. fur Theor. Elektrotech. und Mikroelektron., Bremen Univ., Germany
Abstract :
In this paper we present full-band Monte Carlo simulations of an advanced Silicon/Silicon-Germanium Heterojunction Bipolar Transistor. In addition to this 2D MC simulations we performed simulations with a 1D MC model and a hydrodynamic model. For main internal distributions good consistency is found. We conclude with a microscopic investigation of the full-band Monte Carlo results
Keywords :
Ge-Si alloys; Monte Carlo methods; electron-phonon interactions; heterojunction bipolar transistors; semiconductor device models; silicon; 1D Monte Carlo simulation; 2D Monte Carlo simulation; Si-SiGe; Si/SiGe-HBT; full-band Monte Carlo device simulation; hydrodynamic model; internal distributions; phonon scattering; realistic Ge profile; Acoustic scattering; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; High definition video; Hydrodynamics; Monte Carlo methods; Optical scattering; Phonons; Silicon germanium;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799300
