Title :
Simulation of heterojunction bipolar transistors on gallium-arsenide
Author :
Palankovski, V. ; Selberherr, S. ; Schultheis, R.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
Abstract :
We demonstrate the results of two-dimensional hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are presented
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; leakage currents; power bipolar transistors; semiconductor device models; 296 to 376 K; AlGaAs-GaAs; GaAs; InGaP-GaAs; current gain; forward Gummel plots; leakage currents; one-finger power HBT; physical models; self heating effects; two-dimensional hydrodynamic simulation; Composite materials; Gallium arsenide; Heterojunction bipolar transistors; Hydrodynamics; Lattices; Partial differential equations; Photonic band gap; Semiconductor materials; Semiconductor process modeling; Temperature;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799302
