• DocumentCode
    3250536
  • Title

    Comparative Study on the Optical Band Edge of ZnO Films with Different Measurement Techniques

  • Author

    Li, Feng ; Ma, Zhongquan ; Shen, Ling ; He, Bo

  • Author_Institution
    Dept. of Phys., Shanghai Univ., Shanghai, China
  • fYear
    2009
  • fDate
    14-16 Aug. 2009
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    ZnO films were prepared by radio frequency (rf) magnetron sputtering. The absorption coefficients as a function of incident photon energy were obtained by means of spectroscopic ellipsometer (SE), as well as by using transmission and reflection measurement (T&R). The optical absorption band gap decided by SE is 3.32 eV, while that decided by T&R is 3.26 eV. The difference is ascribed to the fact that SE probes only the surface of films whereas the T&R measurement probes the bulk of the films. The same fact can also be used to explain that, at optical band edge region, the absorption coefficient decided by SE is lower than that decided by T&R. When the incident photon energy is larger than the optical band gap, exitonic transitions in the bulk of the films are used to discuss the change of the absorption coefficient vs. incident photon energy.
  • Keywords
    II-VI semiconductors; absorption coefficients; ellipsometry; energy gap; light reflection; light transmission; semiconductor thin films; sputter deposition; wide band gap semiconductors; zinc compounds; SE probes; ZnO; absorption coefficients; electron volt energy 3.26 eV; electron volt energy 3.32 eV; exitonic transitions; incident photon energy; optical absorption band gap; optical band edge; radio frequency magnetron sputtering; reflection measurement; spectroscopic ellipsometer; transmission measurement; zinc oxide film preparation; Electromagnetic wave absorption; Measurement techniques; Optical films; Optical reflection; Photonic band gap; Probes; Radio frequency; Spectroscopy; Sputtering; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics, 2009. SOPO 2009. Symposium on
  • Conference_Location
    Wuhan
  • Print_ISBN
    978-1-4244-4412-0
  • Type

    conf

  • DOI
    10.1109/SOPO.2009.5230095
  • Filename
    5230095