Transient electro-thermal analysis of dynamic punch-through in SiC power devices

Author

Kaindl, W. ; Lades, M. ; Wachutka, G.

Author_Institution

Inst. for Phys. of Electrotech., Tech. Univ. Munchen, Germany

fYear

1999

fDate

1999

Firstpage

231

Lastpage

234

Abstract

Because of its rather large ionization energies compared to Si, dopants of SiC have larger ionization time constants. Therefore, dynamically enlarged space charge regions, eventually resulting in a punch-through (PT) situation in certain device structures, can easily occur. The detailed numerical analysis presented in this paper shows that the high currents caused by PT are able to destroy SiC power devices. As a consequence, the effect of dynamic PT has to be taken into account designing SiC devices

Keywords

current density; junction gate field effect transistors; numerical analysis; power MOSFET; power field effect transistors; semiconductor device models; silicon compounds; space charge; transient analysis; wide band gap semiconductors; SiC; SiC power devices; current density; current transients; dynamic punch-through; dynamically enlarged depletion regions; dynamically enlarged space charge regions; extended drift-diffusion model; ionization energies; ionization time constants; modeling; numerical analysis; power JFETs; power MOSFETs; transient electro-thermal analysis; Charge carrier processes; Electron emission; Ionization; Power measurement; Semiconductor process modeling; Silicon carbide; Temperature; Time measurement; Transient analysis; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on

Conference_Location

Kyoto

Print_ISBN

4-930813-98-0

Type

conf

DOI

10.1109/SISPAD.1999.799303

Filename

799303