Title :
Density-gradient analysis of tunneling in MOS structures with ultra-thin oxides
Author :
Ancona, M.G. ; Yu, Z. ; Dutton, R.W. ; Voorde, P. J Vande ; Cao, M. ; Vook, D.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Quantum transport theory in the density-gradient approximation is applied to the analysis of tunneling phenomena in ultra-thin oxide (<25 A) MOS structures. Detailed comparisons are made with experimental I-V data for samples with both n+ and p+ polysilicon gates and all of the features of this data are found to be understandable within the density-gradient framework. Besides providing new understanding of the experiments, these results show the density-gradient approach to be useful for engineering-oriented device analysis in quantum regimes with current flow
Keywords :
MIS structures; carrier density; quantum interference devices; quantum interference phenomena; semiconductor device models; semiconductor diodes; tunnelling; 12.5 to 25 angstrom; I-V data; MOS structures; Si-SiO2; carrier density profiles; current flow; density-gradient analysis; engineering-oriented device analysis; n+ polysilicon gates; p+ polysilicon gates; polysilicon diodes; quantum transport theory; tunneling; ultra-thin oxides; Electric variables; Electrons; Equations; FETs; Microscopy; Nonvolatile memory; Quantum mechanics; Reliability engineering; Silicon; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
4-930813-98-0
DOI :
10.1109/SISPAD.1999.799304
