Title :
Fabrication and characteristics of micro-vacuum tube of Si-tip FEAs
Author :
Huang Zhongping ; Chen Panao ; Zhang Shudan ; Cai Yong ; Wang Baoping
Author_Institution :
Lab. of Si Microwave Devices, Nanjing Electron. Devices Inst., China
fDate :
July 30 1995-Aug. 3 1995
Abstract :
In this paper, we have fabricated successfully Si-tip FEAs on the 3/spl deg/ (100) Si substrate (N type /spl rho/=3/spl sim/5 /spl Omega/cm) using wet etching (EPW and KOH), dry-wet-dry alternating oxidation sharpening at 1050/spl deg/C and phosphorus diffusion technique. The density of tips is up to 15000 tips/mm/sup 2/, and radii of the tips are 30 nm. At 110 V on the grid, currents averaging to 53 nA/tip have been measured. Its diode was also fabricated. The radius of grid hole is 1.5 /spl mu/m, and the height of tips is approximate to 2.1 /spl mu/m for EPI and 4.2 /spl mu/m for KOH. The diode added an external anode. A triode was formed as well. While measuring I-V characteristic of diode, we observed the edge effect of MIS structure. After we changed some masks of the diode, the effect was removed. We observed and analyzed the surface of the FEAs after they were broken down by ion bombarding in an intense electric field and air surrounding.
Keywords :
MIS devices; elemental semiconductors; etching; oxidation; silicon; vacuum microelectronics; vacuum tubes; 1.5 micron; 1050 degC; 110 V; 30 nm; FEAs; I-V characteristic; MIS structure; Si; dry-wet-dry alternating oxidation sharpening; edge effect; external anode; field emitter arrays; grid hole radius; intense electric field; ion bombardment; micro-vacuum tube; wet etching; Anisotropic magnetoresistance; Diodes; Electron tubes; Fabrication; Microelectronics; Microwave devices; Microwave theory and techniques; Oxidation; Shape control; Wet etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.486981
